SiC MOSFETs: >10 kV, multi-kA, nanosecond turn-on devices for HPM systems
Develop a packaged silicon-carbide (SiC) MOSFET optimized for size, weight, and power to drive high-power microwave (HPM) systems, delivering a blocking voltage above 10 kV, pulsed current density greater than ±5 kA (10 kA ideal), and turn-on times on the order of tens of nanoseconds with low jitter. The device must be package-ready for integration into HPM platforms while meeting SWaP constra…
Develop state-of-the-art silicon carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) packaged for improved size, weight, and power (SWaP) for applications where a high-blocking voltage of more than 10 kV, a high pulsed current density of greater than +/- 5 kA (10 kA ideal…
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