Scout | Radiation Hardened Gallium Nitride Electronics

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Radiation Hardened Gallium Nitride Electronics

The grant opportunity focuses on developing Gallium Nitride (GaN) materials and techniques to create radiation-hardened GaN electronics for power and radio frequency (RF) applications. It aims to develop radiation-hardened GaN transistors and integrated circuits.

Phase I: Involves identifying GaN foundry processes and evaluating baseline technologies for radiation respo…

Source

Agency: Department of the Navy

Dates

Opportunity Released: January 8, 2025

Keywords

GaN

radiation hardened

electronics

power applications

RF applications

high-electron mobility transistor

integrated circuits

radiation-resilient devices

military systems

space radiation effects

radiation environments

Supporting Links

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