Radiation Hardened Gallium Nitride Electronics
The grant opportunity focuses on developing Gallium Nitride (GaN) materials and techniques to create radiation-hardened GaN electronics for power and radio frequency (RF) applications. It aims to develop radiation-hardened GaN transistors and integrated circuits.
Phase I: Involves identifying GaN foundry processes and evaluating baseline technologies for radiation respo…
Characterize Gallium Nitride (GaN) materials and develop the techniques to design radiation hardened GaN electronics for power and/or radio frequency (RF) applications. Additional objectives include development of radiation hardened discrete GaN High-Electron Mobility Transistor (HEMT) devices a…
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