Scout | Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices

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Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices

The grant opportunity focuses on developing aluminum scandium nitride (AlScN) and aluminum scandium nitride/gallium nitride (AlScN/GaN) structures to advance radio frequency (RF) transistor technology.

Phase I: Involves assessing feasibility and creating a plan for a growth process that deposits Al(1-x)Sc(x)N with more than 18% Scandium concentration and a thi…

Source

Agency: Air Force

Dates

Opportunity Released: April 23, 2025

Keywords

1. Aluminum Scandium Nitride 2. AlScN/GaN Epitaxial Structures 3. RF Transistor Technology 4. Epitaxial Growth Process 5. Department of the Air Force Integration 6. High Frequency RF Power Amplifiers 7. Surface Roughness 8. Thin Film Deposition 9. Next Generation Communication Technology 10. Prototype Development

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