Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices
The grant opportunity focuses on developing aluminum scandium nitride (AlScN) and aluminum scandium nitride/gallium nitride (AlScN/GaN) structures to advance radio frequency (RF) transistor technology.
Phase I: Involves assessing feasibility and creating a plan for a growth process that deposits Al(1-x)Sc(x)N with more than 18% Scandium concentration and a thi…
Develop growth system and process for aluminum scandium nitride (AlScN) and aluminum scandium nitride/gallium Nitride (AlScN/GaN) epitaxial structures to enable next generation radio frequency (RF) transistor technology.
Phase I
Determine feasibility, establish a plan, and desc…
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