Bulk growth of InAsP crystal
The grant focuses on developing high-quality, uniform wafers of the semiconductor alloy InAsP for electro-optical infrared systems. Phase I is not required as preliminary research indicates readiness for Phase II, but documentation of feasibility and a clear action plan must be provided. Phase II involves optimizing the production of these wafers to ensure they are optically clear and have spe…
The overall goal of the R&D effort is to develop high optical quality compositionally uniform wafers of the ternary semiconductor alloy InAsP with different alloy compositions. The wafer sizes should be approximately 20 to 25 mm in cross section dimensions, and above 1 mm in thickness.
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