Scout | Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic

This opportunity is no longer accepting applications.

grant

Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic

The Department of Defense (DoD) seeks a solution for optimizing and monitoring the production of thick silicon carbide (SiC) layers using a chemical vapor deposition process. The goal is to improve start-up times, enhance layer quality, maximize wafer production, and reduce waste. The desired technology will provide continuous real-time adjustments during the process, based on data like temper…

Source

Agency: Defense Microelectronics Activity

Dates

Open for Submission: July 16, 2024

Opportunity Released: October 3, 2023

Application Window Closes: September 10, 2024

Keywords

Silicon Carbide

Epitaxy

Process Control

Chemical Vapor Deposition

Microelectronics

AI/ML Algorithms

Manufacturing Optimization

Wafer Monitoring

Defect Reduction

Semiconductor Fabrication

Supporting Links

Documents

Similar Opportunities

Unlock similar opportunities

Get the full picture on this opportunity

Create a free Scout account to unlock everything you need to decide fast and win the grant.

Instant Fit Analysis

Let our grant expert AI score how well this opportunity aligns with your organization, strengths, gaps, and how to improve your chances of winning funding.
Deep agency & funder detail

Program context, sub-agency structure, and a full eligibility breakdown.
Source links & full documents

Jump straight to the solicitation and download every attachment.
Similar opportunities

Discover related funding matched to your work.

Get a Demo Sign Up

Already have an account? Sign In

Trusted by 500+ Happy Customers