Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic
The Department of Defense (DoD) seeks a solution for optimizing and monitoring the production of thick silicon carbide (SiC) layers using a chemical vapor deposition process. The goal is to improve start-up times, enhance layer quality, maximize wafer production, and reduce waste. The desired technology will provide continuous real-time adjustments during the process, based on data like temper…
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