Electronic quality ferroelectric III-Nitride epitaxy for device heterostructures
The grant opportunity seeks the development of single crystalline epitaxial thin films and heterostructures made from Group III-IIIb Nitride materials for electronic devices. The main focus is to create scalable films up to 4-inch wafers, using MOCVD processes with novel precursors, to complement existing research methods like MBE. Key goals include improving the ferroelectric properties of th…
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