Electronic quality ferroelectric III-Nitride epitaxy for device heterostructures
The grant opportunity seeks the development of single crystalline epitaxial thin films and heterostructures made from Group III-IIIb Nitride materials for electronic devices. The main focus is to create scalable films up to 4-inch wafers, using MOCVD processes with novel precursors, to complement existing research methods like MBE. Key goals include improving the ferroelectric properties of th…
OUSD (R&E) CRITICAL TECHNOLOGY AREA(S): Hypersonics\r\n\r\n\r\n\r\nOBJECTIVE: To develop single crystalline epitaxial thin films and heterostructure of group III-IIIb-Nitride thin films for electronic device applications. The processes used should be scalable to 4-inch diameter wafer sizes o…
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