Scout | Electronic quality ferroelectric III-Nitride epitaxy for device heterostructures

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Electronic quality ferroelectric III-Nitride epitaxy for device heterostructures

The grant opportunity seeks the development of single crystalline epitaxial thin films and heterostructures made from Group III-IIIb Nitride materials for electronic devices. The main focus is to create scalable films up to 4-inch wafers, using MOCVD processes with novel precursors, to complement existing research methods like MBE. Key goals include improving the ferroelectric properties of th…

Source

Agency: Army

Dates

Open for Submission: June 11, 2024

Opportunity Released: October 3, 2023

Application Window Closes: July 30, 2024

Keywords

semiconductor

ferroelectric

III-Nitride

epitaxy

molecular beam epitaxy

metal-organic chemical vapor deposition

high temperature electronics

electronic memory

nonlinear optical

aluminum scandium nitride

Supporting Links

Documents

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