RF front-end design: LNA & PA on GF 200-mm GaN-on-Si (130RFG1)
Design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) in GlobalFoundries' commercial 200-mm GaN-on-Si (130RFG1) process to improve output power density, linearity, and efficiency for radio communications. The work targets higher-performance RF front ends for potential military and commercial systems.
The objective is to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) in a commercially available state-of-the-art GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon technology (130RFG1) to improve higher output power density, linearity, and efficiency in …
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