Vertical β-Ga2O3 device development for extreme environment power converters
This grant opportunity focuses on developing power converters for extreme environments using advanced transistor technology with the material β-Ga2O3.
Phase I: Participants will demonstrate the ability to fabricate these transistors and diodes, addressing fabrication challenges for creating high voltage, low-loss devices that work in extreme conditions. They will also …
The objective is to develop extreme environment compatible power converters that use vertical field-effect transistors developed using Ultra-Wide Band Gap (UWBG) material β-Ga2O3. Fabrication devices with multi-kilo-volt breakdown voltage made on 4″ wafers with high uniformity, radiation hardnes…
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